Wafer-Scale Growth of WSe2 Monolayers Toward Phase-Engineered Hybrid WOx/WSe2 Films with Sub-ppb NOx Gas Sensing by a Low-Temperature Plasma-Assisted Selenization Process

doi:10.1021/acs.chemmater.6b04467

	Wafer-Scale Growth of WSe2 Monolayers Toward Phase-Engineered Hybrid WOx/WSe2 Films with Sub-ppb NOx Gas Sensing by a Low-Temperature Plasma-Assisted Selenization Process
	Medina, Henry 1; Li, Jian-Guang 1; Su, Teng-Yu 1; Lan, Yann-Wen 3; Lee, Shao-Hsin 1; Chen, Chia-Wei 1; Chen, Yu-Ze 1; Manikandan, Arumugam 1; Tsai, Shin-Hung 4; Navabi, Aryan 4
	2017-02-28
发表期刊	CHEMISTRY OF MATERIALS
ISSN	0897-4756
卷号	29 期号:4 页码:1587-1598
摘要	An inductively coupled plasma (ICP) process was used to synthesize transition metal dichalcogenides (TMDs) through a plasma-assisted selenization process of metal oxide (MOx) at a temperature as low as 250 degrees C. In comparison with other CVD processes, the use of ICP facilitates the decomposition of the precursors at low temperatures. Therefore, the temperature required for the formation of TMDs can be drastically reduced. WSe2 was chosen as a model material system due to its technological importance as a p-type inorganic semiconductor with an excellent hole mobility. Large-area synthesis of WSe2 on polyimide (30 x 40 cm(2)) flexible substrates and 8 in. silicon wafers with good uniformity was demonstrated at the formation temperature of 250 degrees C confirmed by Raman and X-ray photoelectron (XPS) spectroscopy. Furthermore, by controlling different H-2/N-2 ratios, hybrid WOx/WSe2 films can be formed at the formation temperature of 250 degrees C confirmed by TEM and XPS. Remarkably, hybrid films composed of partially reduced WOx and small domains of WSe2 with a thickness of similar to 5 nm show a sensitivity of 20% at 25 ppb at room temperature, and an estimated detection limit of 0.3 ppb with a S/N > 10 for the potential development of a low-cost plastic/wearable sensor with high sensitivity.
关键词	Gas sensing electrodes Hole mobility Inductively coupled plasma Monolayers Silicon wafers Temperature Transition metal compounds Transition metals X ray photoelectron spectroscopy Formation temperature Inductively coupled plasma (ICP) Inorganic semiconductors Large area synthesis Low temperature plasmas Model material systems Transition metal dichalcogenides X-ray photoelectrons
DOI	10.1021/acs.chemmater.6b04467
收录类别	SCI ; SCIE
语种	英语
资助项目	National Tsing Hua University[105A0088J4]
WOS研究方向	Chemistry ; Materials Science
WOS类目	Chemistry, Physical ; Materials Science, Multidisciplinary
WOS记录号	WOS:000395358600017
出版者	AMER CHEMICAL SOC
EI入藏号	20170903404669
EI主题词	Selenium compounds
EI分类号	531 Metallurgy and Metallography - 641.1 Thermodynamics - 712.1 Semiconducting Materials - 714.2 Semiconductor Devices and Integrated Circuits - 932.3 Plasma Physics
引用统计	被引频次：79[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	https://ir.lut.edu.cn/handle/2XXMBERH/33358
专题	兰州理工大学材料科学与工程学院
通讯作者	Chueh, Yu-Lun
作者单位	1.Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30013, Taiwan; 2.Lanzhou Univ Technol, Sch Mat Sci & Engn, State Key Lab Adv Proc & Recycling Nonferrous Met, Lanzhou 730050, Gansu, Peoples R China; 3.Natl Nano Device Labs, 26,Prosperity Rd 1, Hsinchu 30078, Taiwan; 4.Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA; 5.Univ Calif, Elect Engn & Comp Sci, Berkeley, CA 94720 USA
通讯作者单位	材料科学与工程学院
推荐引用方式 GB/T 7714	Medina, Henry,Li, Jian-Guang,Su, Teng-Yu,et al. Wafer-Scale Growth of WSe2 Monolayers Toward Phase-Engineered Hybrid WOx/WSe2 Films with Sub-ppb NOx Gas Sensing by a Low-Temperature Plasma-Assisted Selenization Process[J]. CHEMISTRY OF MATERIALS,2017,29(4):1587-1598.
APA	Medina, Henry.,Li, Jian-Guang.,Su, Teng-Yu.,Lan, Yann-Wen.,Lee, Shao-Hsin.,...&Chueh, Yu-Lun.(2017).Wafer-Scale Growth of WSe2 Monolayers Toward Phase-Engineered Hybrid WOx/WSe2 Films with Sub-ppb NOx Gas Sensing by a Low-Temperature Plasma-Assisted Selenization Process.CHEMISTRY OF MATERIALS,29(4),1587-1598.
MLA	Medina, Henry,et al."Wafer-Scale Growth of WSe2 Monolayers Toward Phase-Engineered Hybrid WOx/WSe2 Films with Sub-ppb NOx Gas Sensing by a Low-Temperature Plasma-Assisted Selenization Process".CHEMISTRY OF MATERIALS 29.4(2017):1587-1598.

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