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13.5-14.6MeV中子能区锗的同位素反应截面的测量
蒲忠胜; 关秋云; 马军; 严冬
2006
Source Publication高能物理与核物理
ISSN0254-3052
Volume30Issue:12Pages:1171-1174
Abstract报道了在13.5-14.6MeV中子能区用活化法测得的~(76)Ge(n, 2n)~(69)Ge, ~(76)Ge(n, 2n)~(75)Ge, ~(70)Ge(n, p)~(70)Ga, ~(72)Ge(n, p)~(72)Ga, ~(73)Ge(n, p)~(73)Ga, ~(72)Ge(n, a)~(69m)Zn和~(74)Ge(n, oc)~(71m)Zn的反应截面值.中子注量用~(93)Nb(n, 2n)~(92m)Nb反应截面得到.单能中子由T(d,n)4He反应获得.同时还列举了已收集到的文献值以作比较.
Keyword 中子反应 反应截面 活化法
Indexed ByCSCD
Language中文
WOS Research AreaPhysics
WOS SubjectPHYSICS NUCLEAR
CSCD IDCSCD:2611047
Document Type期刊论文
Identifierhttp://ir.lut.edu.cn/handle/2XXMBERH/75944
Collection理学院
Affiliation兰州理工大学理学院物理系, 兰州, 甘肃 730050, 中国
First Author AffilicationColl Sci
First Signature AffilicationColl Sci
Recommended Citation
GB/T 7714
蒲忠胜,关秋云,马军,等. 13.5-14.6MeV中子能区锗的同位素反应截面的测量[J]. 高能物理与核物理,2006,30(12):1171-1174.
APA 蒲忠胜,关秋云,马军,&严冬.(2006).13.5-14.6MeV中子能区锗的同位素反应截面的测量.高能物理与核物理,30(12),1171-1174.
MLA 蒲忠胜,et al."13.5-14.6MeV中子能区锗的同位素反应截面的测量".高能物理与核物理 30.12(2006):1171-1174.
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