Institutional Repository of Coll Mat Sci & Engn
Effects of co-doping on electronic structure and optical properties of 3C-SiC from first-principles method | |
Lu, Xuefeng1,2; Zhao, Tingting1; Lei, Qingfeng1; Yan, Xiaobin1,2; Ren, Junqiang1; La, Peiqing1,2 | |
2019-12 | |
发表期刊 | COMPUTATIONAL MATERIALS SCIENCE |
ISSN | 0927-0256 |
卷号 | 170 |
摘要 | Electronic structure and optical properties of Cr-, Al- and Cr-Al co-doped 3C-SiC systems are investigated by the first principles method. Al-, Cr- and Cr-Al co-doped systems present the characteristics of p-, n- and n-type semiconductor materials, respectively. Charge density difference results show that the covalency of bonding reduces after doping, which is verified by bond population values due to the fact that the values of single doped and Cr-Al co-doped systems are lower than that of un-doped 3C-SiC. The intrinsic 3C-SiC barely has microwave dielectric loss, however, it can be improved through Al or Cr doping, especially the effect of Al doping, indicating the enhanced ability of materials to absorb electromagnetic waves, which is helpful for SiC to be widely used in military and aerospace fields as absorbing materials. By analyzing the host peaks of the absorption coefficient and the loss function, it is found that there is a significant red shift after doping. SiC exhibits the "Transparent Type" characteristic based on the fact that it has a lower absorption coefficient and reflectance in the visible light region, which proves the foundation for optical property and opens a window for photoelectric devices. |
关键词 | 3C-SiC First principles Co-doping Electronic structure Optical properties |
DOI | 10.1016/j.commatsci.2019.109172 |
收录类别 | SCI ; SCIE |
语种 | 英语 |
资助项目 | National Natural Science Foundation of China[51662026][51561020] ; China Postdoctoral Science Foundation[2015M572615][2016T90959] ; Gansu Provincial Youth Science and Technology Fund Projects[1606RJZA157][1610RJZA005][1610RJZA014] ; Shenyang National Laboratory for Materials Science[18LHPY001] ; State Key Laboratory of Advanced Processing and Recycling of Nonferrous Metals[18LHPY001] |
WOS研究方向 | Materials Science |
WOS类目 | Materials Science, Multidisciplinary |
WOS记录号 | WOS:000498062100036 |
出版者 | ELSEVIER |
EI入藏号 | 20193307317304 |
EI主题词 | Silicon carbide |
EI分类号 | 541.1 Aluminum - 549.3 Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals - 708.1 Dielectric Materials - 711 Electromagnetic Waves - 712.1 Semiconducting Materials - 741.1 Light/Optics - 804.2 Inorganic Compounds |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | https://ir.lut.edu.cn/handle/2XXMBERH/64224 |
专题 | 材料科学与工程学院 省部共建有色金属先进加工与再利用国家重点实验室 |
通讯作者 | Lu, Xuefeng |
作者单位 | 1.Lanzhou Univ Technol, State Key Lab Adv Proc & Recycling Nonferrous Met, Lanzhou 730050, Gansu, Peoples R China; 2.Lanzhou Univ Technol, Key Lab Nonferrous Met Alloys & Proc, Minist Educ, Lanzhou 730050, Gansu, Peoples R China |
第一作者单位 | 省部共建有色金属先进加工与再利用国家重点实验室; 兰州理工大学 |
通讯作者单位 | 省部共建有色金属先进加工与再利用国家重点实验室; 兰州理工大学 |
第一作者的第一单位 | 省部共建有色金属先进加工与再利用国家重点实验室 |
推荐引用方式 GB/T 7714 | Lu, Xuefeng,Zhao, Tingting,Lei, Qingfeng,et al. Effects of co-doping on electronic structure and optical properties of 3C-SiC from first-principles method[J]. COMPUTATIONAL MATERIALS SCIENCE,2019,170. |
APA | Lu, Xuefeng,Zhao, Tingting,Lei, Qingfeng,Yan, Xiaobin,Ren, Junqiang,&La, Peiqing.(2019).Effects of co-doping on electronic structure and optical properties of 3C-SiC from first-principles method.COMPUTATIONAL MATERIALS SCIENCE,170. |
MLA | Lu, Xuefeng,et al."Effects of co-doping on electronic structure and optical properties of 3C-SiC from first-principles method".COMPUTATIONAL MATERIALS SCIENCE 170(2019). |
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