Controlled Growth and Atomic-Scale Mapping of Charged Heterointerfaces in PbTiO3/BiFeO3 Bilayers

doi:10.1021/acsami.7b04681

	Controlled Growth and Atomic-Scale Mapping of Charged Heterointerfaces in PbTiO3/BiFeO3 Bilayers
	Liu, Ying 1,2; Zhu, Yin-Lian 1; Tang, Yun-Long 1; Wang, Yu-Jia 1; Li, Shuang 1,2; Zhang, Si-Rui 1,2; Han, Meng-Jiao 1,2; Ma, Jin-Yuan1,3 ; Suriyaprakash, Jagadeesh 1,2; Ma, Xiu-Liang1,3
	2017-08-02
发表期刊	ACS APPLIED MATERIALS & INTERFACES
ISSN	1944-8244
卷号	9 期号:30 页码:25578-25586
摘要	Functional oxide interfaces have received a great deal of attention owing to their intriguing physical properties induced by the interplay of lattice, orbital, charge, and spin degrees of freedom. Atomic-scale precision growth of the oxide interface opens new corridors to manipulate the correlated features in nanoelectronics devices. Here, we demonstrate that both head-to-head positively charged and tail-to-tail negatively charged BiFeO3/PbTiO3 (BFO/PTO) heterointerfaces were successfully fabricated by designing the BFO/PTO film system deliberately. Aberration-corrected scanning transmission electron microscopic mapping reveals a head-to-head polarization configuration present at the BFO/PTO interface, when the film was deposited directly on a SrTiO3 (001) substrate. The interfacial atomic structure is reconstructed, and the interfacial width is determined to be 5-6 unit cells. The polarization on both sides of the interface is remarkably enhanced. Atomic-scale structural and chemical element analyses exhibit that the reconstructed interface is rich in oxygen, which effectively compensates for the positive bound charges at the head-to-head polarized BFO/PTO interface. In contrast to the head-to-head polarization configuration, the tail-to-tail BFO/PTO interface exhibits a perfect coherency, when SrRuO3 was introduced as a buffer layer on the substrates prior to the film growth. The width of this tail-to-tail interface is estimated to be 3-4 unit cells, and oxygen vacancies are supposed to screen the negative polarization bound charge. The formation mechanism of these distinct interfaces was discussed from the perspective of charge redistribution.
关键词	charged interface perovskite ferroelectric controlled growth STEM
DOI	10.1021/acsami.7b04681
收录类别	SCI ; SCIE
语种	英语
资助项目	Key Research Program of Frontier Sciences CAS[QYZDJ-SSW-JSC010]
WOS研究方向	Science & Technology - Other Topics ; Materials Science
WOS类目	Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
WOS记录号	WOS:000407089300058
出版者	AMER CHEMICAL SOC
EI入藏号	20173204027235
EI主题词	Film growth
EI分类号	405.3 Surveying - 482.2 Minerals - 708.1 Dielectric Materials - 804 Chemical Products Generally - 931.1 Mechanics - 931.3 Atomic and Molecular Physics - 933.1 Crystalline Solids
引用统计	被引频次：16[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	https://ir.lut.edu.cn/handle/2XXMBERH/33156
专题	材料科学与工程学院材料科学与工程学院_特聘教授组
通讯作者	Zhu, Yin-Lian
作者单位	1.Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Wenhua Rd 72, Shenyang 110016, Liaoning, Peoples R China; 2.Univ Chinese Acad Sci, Yuquan Rd 19, Beijing 100049, Peoples R China; 3.Lanzhou Univ Technol, Sch Mat Sci & Engn, Langongping Rd 287, Lanzhou 730050, Gansu, Peoples R China
推荐引用方式 GB/T 7714	Liu, Ying,Zhu, Yin-Lian,Tang, Yun-Long,et al. Controlled Growth and Atomic-Scale Mapping of Charged Heterointerfaces in PbTiO3/BiFeO3 Bilayers[J]. ACS APPLIED MATERIALS & INTERFACES,2017,9(30):25578-25586.
APA	Liu, Ying.,Zhu, Yin-Lian.,Tang, Yun-Long.,Wang, Yu-Jia.,Li, Shuang.,...&Ma, Xiu-Liang.(2017).Controlled Growth and Atomic-Scale Mapping of Charged Heterointerfaces in PbTiO3/BiFeO3 Bilayers.ACS APPLIED MATERIALS & INTERFACES,9(30),25578-25586.
MLA	Liu, Ying,et al."Controlled Growth and Atomic-Scale Mapping of Charged Heterointerfaces in PbTiO3/BiFeO3 Bilayers".ACS APPLIED MATERIALS & INTERFACES 9.30(2017):25578-25586.

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