Institutional Repository of Coll Mat Sci & Engn
Controlled Growth and Atomic-Scale Mapping of Charged Heterointerfaces in PbTiO3/BiFeO3 Bilayers | |
Liu, Ying1,2; Zhu, Yin-Lian1; Tang, Yun-Long1; Wang, Yu-Jia1; Li, Shuang1,2; Zhang, Si-Rui1,2; Han, Meng-Jiao1,2; Ma, Jin-Yuan1,3; Suriyaprakash, Jagadeesh1,2; Ma, Xiu-Liang1,3 | |
2017-08-02 | |
发表期刊 | ACS APPLIED MATERIALS & INTERFACES |
ISSN | 1944-8244 |
卷号 | 9期号:30页码:25578-25586 |
摘要 | Functional oxide interfaces have received a great deal of attention owing to their intriguing physical properties induced by the interplay of lattice, orbital, charge, and spin degrees of freedom. Atomic-scale precision growth of the oxide interface opens new corridors to manipulate the correlated features in nanoelectronics devices. Here, we demonstrate that both head-to-head positively charged and tail-to-tail negatively charged BiFeO3/PbTiO3 (BFO/PTO) heterointerfaces were successfully fabricated by designing the BFO/PTO film system deliberately. Aberration-corrected scanning transmission electron microscopic mapping reveals a head-to-head polarization configuration present at the BFO/PTO interface, when the film was deposited directly on a SrTiO3 (001) substrate. The interfacial atomic structure is reconstructed, and the interfacial width is determined to be 5-6 unit cells. The polarization on both sides of the interface is remarkably enhanced. Atomic-scale structural and chemical element analyses exhibit that the reconstructed interface is rich in oxygen, which effectively compensates for the positive bound charges at the head-to-head polarized BFO/PTO interface. In contrast to the head-to-head polarization configuration, the tail-to-tail BFO/PTO interface exhibits a perfect coherency, when SrRuO3 was introduced as a buffer layer on the substrates prior to the film growth. The width of this tail-to-tail interface is estimated to be 3-4 unit cells, and oxygen vacancies are supposed to screen the negative polarization bound charge. The formation mechanism of these distinct interfaces was discussed from the perspective of charge redistribution. |
关键词 | charged interface perovskite ferroelectric controlled growth STEM |
DOI | 10.1021/acsami.7b04681 |
收录类别 | SCI ; SCIE |
语种 | 英语 |
资助项目 | Key Research Program of Frontier Sciences CAS[QYZDJ-SSW-JSC010] |
WOS研究方向 | Science & Technology - Other Topics ; Materials Science |
WOS类目 | Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary |
WOS记录号 | WOS:000407089300058 |
出版者 | AMER CHEMICAL SOC |
EI入藏号 | 20173204027235 |
EI主题词 | Film growth |
EI分类号 | 405.3 Surveying - 482.2 Minerals - 708.1 Dielectric Materials - 804 Chemical Products Generally - 931.1 Mechanics - 931.3 Atomic and Molecular Physics - 933.1 Crystalline Solids |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | https://ir.lut.edu.cn/handle/2XXMBERH/33156 |
专题 | 材料科学与工程学院 材料科学与工程学院_特聘教授组 |
通讯作者 | Zhu, Yin-Lian |
作者单位 | 1.Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Wenhua Rd 72, Shenyang 110016, Liaoning, Peoples R China; 2.Univ Chinese Acad Sci, Yuquan Rd 19, Beijing 100049, Peoples R China; 3.Lanzhou Univ Technol, Sch Mat Sci & Engn, Langongping Rd 287, Lanzhou 730050, Gansu, Peoples R China |
推荐引用方式 GB/T 7714 | Liu, Ying,Zhu, Yin-Lian,Tang, Yun-Long,et al. Controlled Growth and Atomic-Scale Mapping of Charged Heterointerfaces in PbTiO3/BiFeO3 Bilayers[J]. ACS APPLIED MATERIALS & INTERFACES,2017,9(30):25578-25586. |
APA | Liu, Ying.,Zhu, Yin-Lian.,Tang, Yun-Long.,Wang, Yu-Jia.,Li, Shuang.,...&Ma, Xiu-Liang.(2017).Controlled Growth and Atomic-Scale Mapping of Charged Heterointerfaces in PbTiO3/BiFeO3 Bilayers.ACS APPLIED MATERIALS & INTERFACES,9(30),25578-25586. |
MLA | Liu, Ying,et al."Controlled Growth and Atomic-Scale Mapping of Charged Heterointerfaces in PbTiO3/BiFeO3 Bilayers".ACS APPLIED MATERIALS & INTERFACES 9.30(2017):25578-25586. |
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