The controllable electronic characteristics and Schottky barrier of graphene/GaP heterostructure via interlayer coupling and in-plane strain

doi:10.1016/j.mseb.2022.115882

	The controllable electronic characteristics and Schottky barrier of graphene/GaP heterostructure via interlayer coupling and in-plane strain
	Lu, Xuefeng; Li, Lingxia; Guo, Xin; Ren, Junqiang; Xue, Hongtao; Tang, Fuling
	2022-10
发表期刊	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
ISSN	0921-5107
卷号	284
摘要	Establishing the desired heterostructures by assembling suitable semiconductor materials has shown significant potential for applications in next-generation micro-nano electronic devices. In this present contribution, we demonstrate the geometric structure and electronic properties of graphene/GaP heterostructure by first-principles calculations. It is found that the heterostructure is characterized by weak interlayer coupling accompanying the stable layer spacing of 3.40 Å and binding energy of −39.35 meV, meaning that the interlayer is dominated by van der Waals (vdW) force. The electronic band structure of free-standing graphene and GaP monolayers are preserved well. Meanwhile, a tiny bandgap of approximatively 20 meV at the Dirac point of graphene is opened, which is attributed to the breakdown of sublattice symmetry. In the ground state, the Schottky contact of p-type is present with the n-type and p-type SBH of 1.71 eV and 0.10 eV, respectively, which can be effectively induced by imposing interlayer coupling as well as in-plane strains. Especially, the transition of p-Schottky contact to p-Ohmic contact occurs when the layer spacing decreases to 3.20 Å or the strain increases to +2 %. These theoretical results may offer potential guiding principle in future electronic devices. © 2022 Elsevier B.V.
关键词	Binding energy Calculations Gallium compounds Graphene Ground state Heterojunctions III-V semiconductors Ohmic contacts Schottky barrier diodes Strain Thermoelectric equipment Van der Waals forces Electronic characteristics Graphene/GaP In-plane strains Interlayer coupling Layer-spacing Micro/nano Nanoelectronic devices P-type Schottky barriers Schottky contacts
DOI	10.1016/j.mseb.2022.115882
收录类别	EI ; SCIE
语种	英语
WOS研究方向	Materials Science ; Physics
WOS类目	Materials Science, Multidisciplinary ; Physics, Condensed Matter
WOS记录号	WOS:000888601400006
出版者	Elsevier Ltd
EI入藏号	20223012420220
EI主题词	Electronic properties
EI分类号	615.4 Thermoelectric Energy - 712.1 Semiconducting Materials - 714.2 Semiconductor Devices and Integrated Circuits - 761 Nanotechnology - 801.4 Physical Chemistry - 804 Chemical Products Generally - 921 Mathematics - 931.3 Atomic and Molecular Physics - 951 Materials Science
来源库	WOS
引用统计	被引频次：2[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	https://ir.lut.edu.cn/handle/2XXMBERH/159359
专题	材料科学与工程学院省部共建有色金属先进加工与再利用国家重点实验室
通讯作者	Guo, Xin
作者单位	Lanzhou Univ Technol, Dept Mat Sci & Engn, State Key Lab Adv Proc & Recycling Nonferrous Met, Lanzhou 730050, Peoples R China
第一作者单位	兰州理工大学
通讯作者单位	兰州理工大学
第一作者的第一单位	兰州理工大学
推荐引用方式 GB/T 7714	Lu, Xuefeng,Li, Lingxia,Guo, Xin,et al. The controllable electronic characteristics and Schottky barrier of graphene/GaP heterostructure via interlayer coupling and in-plane strain[J]. Materials Science and Engineering B: Solid-State Materials for Advanced Technology,2022,284.
APA	Lu, Xuefeng,Li, Lingxia,Guo, Xin,Ren, Junqiang,Xue, Hongtao,&Tang, Fuling.(2022).The controllable electronic characteristics and Schottky barrier of graphene/GaP heterostructure via interlayer coupling and in-plane strain.Materials Science and Engineering B: Solid-State Materials for Advanced Technology,284.
MLA	Lu, Xuefeng,et al."The controllable electronic characteristics and Schottky barrier of graphene/GaP heterostructure via interlayer coupling and in-plane strain".Materials Science and Engineering B: Solid-State Materials for Advanced Technology 284(2022).