A study on repeatable and universal growth morphology optimization for nanowires grown on Si substrates

doi:10.1016/j.vacuum.2022.111057

	A study on repeatable and universal growth morphology optimization for nanowires grown on Si substrates
	Wang, Xiaoye1,2,3 ; Bai, Xue 4,5; Yang, Xiaoguang 6,7; Du, Wenna 8; Yang, Tao 6,7
	2022-07
发表期刊	Vacuum
ISSN	0042-207X
卷号	201
摘要	In this work, a series of NWs growths with different treatments for substrate surface have been carried out to study growth morphology optimization for NWs grown on Si substrates. A substrate treatment method of high-temperature annealing combined with thin oxide layer formed on the substrate surface has been developed. It is found that a lot of crystal defects exist in random locations of common substrates surface which make it difficult to grow NWs, but easy to form parasitic islands. XRD and AFM show that high-temperature annealing process can effectively eliminate most of the crystal defects in the substrates, inhibit the formation of parasitic islands. Combined with forming thin natural oxide layer on the substrate surface, the density of InAs NWs can be increased, the growth morphology uniformity of InAs NWs on Si substrates can be improved and parasitic islands are rarely formed on the substrates surface at all. In order to verify the effectiveness and universality of this method, another experiment of InGaAs NWs grown at different temperatures obtained excellent growth results as well. Therefore, this substrate treatment method has good effectiveness, repeatability and universality in optimizing the growth morphology of NWs. © 2022 Elsevier Ltd
关键词	Crystal defects Gallium alloys III-V semiconductors Indium alloys Metallorganic chemical vapor deposition Morphology Nanowires Semiconducting indium gallium arsenide Semiconductor alloys Silicon Substrates Growth morphology High-temperature annealing Inas nanowire Metal-organic chemical vapour depositions Optimisations Parasitic island Parasitics Si substrates Substrate surface Treatment methods
DOI	10.1016/j.vacuum.2022.111057
收录类别	EI ; SCIE
语种	英语
WOS研究方向	Materials Science ; Physics
WOS类目	Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号	WOS:000793670800001
出版者	Elsevier Ltd
EI入藏号	20221611977799
EI主题词	Indium arsenide
EI分类号	549.3 Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals ; 712.1 Semiconducting Materials ; 712.1.2 Compound Semiconducting Materials ; 761 Nanotechnology ; 802.2 Chemical Reactions ; 804.2 Inorganic Compounds ; 931.2 Physical Properties of Gases, Liquids and Solids ; 933 Solid State Physics ; 933.1.1 Crystal Lattice ; 951 Materials Science
来源库	WOS
引用统计	被引频次：1[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	https://ir.lut.edu.cn/handle/2XXMBERH/158482
专题	电气工程与信息工程学院
通讯作者	Wang, Xiaoye; Yang, Tao
作者单位	1.Lanzhou Univ Technol, Coll Elect & Informat Engn, Lanzhou 730050, Peoples R China; 2.Lanzhou Univ Technol, Key Lab Gansu Adv Control Ind Proc, Lanzhou 730050, Peoples R China; 3.Lanzhou Univ Technol, Natl Demonstrat Ctr Expt Elect & Control Engn Edu, Lanzhou 730050, Peoples R China; 4.Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China; 5.Lanzhou Univ, Key Lab Magnetism & Magnet Mat, Minist Educ, Lanzhou 730000, Peoples R China; 6.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China; 7.Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China; 8.CAS Ctr Excellence Nanosci, Natl Ctr Nanosci & Technol, CAS Key Lab Standardizat & Measurement Nanotechno, Beijing 100190, Peoples R China
第一作者单位	电气工程与信息工程学院; 兰州理工大学
通讯作者单位	电气工程与信息工程学院; 兰州理工大学
第一作者的第一单位	电气工程与信息工程学院
推荐引用方式 GB/T 7714	Wang, Xiaoye,Bai, Xue,Yang, Xiaoguang,et al. A study on repeatable and universal growth morphology optimization for nanowires grown on Si substrates[J]. Vacuum,2022,201.
APA	Wang, Xiaoye,Bai, Xue,Yang, Xiaoguang,Du, Wenna,&Yang, Tao.(2022).A study on repeatable and universal growth morphology optimization for nanowires grown on Si substrates.Vacuum,201.
MLA	Wang, Xiaoye,et al."A study on repeatable and universal growth morphology optimization for nanowires grown on Si substrates".Vacuum 201(2022).