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Investigations on preparation and the hall effect of the Cu3N thin films
Wang, Ming-Xu; Yue, Guang-Hui; Fan, Xiao-Yan; Yan, De; Yan, Peng-Xun; Yang, Qiang
2006-10-01
发表期刊Rengong Jingti Xuebao/Journal of Synthetic Crystals
ISSN1000985X
卷号35期号:5页码:1108-1112
摘要Cu3N thin film was prepared by reactive radio-frequency(RF) magnetron sputtering on glass substrate with the substrate temperature of 100°C, and the pure N2 flow rate of 12sccm. XRD pattern showed a preferred [100] orientation of the film. SEM and AFM images showed that the film surface is smooth and tightly structured. The Hall effect properties of the film were characterized by four-probe method, and the result showed that both the Hall coefficient and the Hall resistivity increase with temperature decreasing. The Hall mobility decreases in a short range at high temperature region, but somewhat increases in low temperature region. We also figured out the value of the band gap at about 1. 35eV from the Hall coefficients at various temperatures.
收录类别EI
语种中文
出版者Chinese Ceramic Society, Beijing, China
EI入藏号20070110349201
文献类型期刊论文
条目标识符https://ir.lut.edu.cn/handle/2XXMBERH/151389
专题兰州理工大学
作者单位1.Institute for Plasma and Metal Materials, Lanzhou University, Lanzhou 730000, China;
2.Lanzhou Polytechnical College, Lanzhou 730050, China
推荐引用方式
GB/T 7714
Wang, Ming-Xu,Yue, Guang-Hui,Fan, Xiao-Yan,et al. Investigations on preparation and the hall effect of the Cu3N thin films[J]. Rengong Jingti Xuebao/Journal of Synthetic Crystals,2006,35(5):1108-1112.
APA Wang, Ming-Xu,Yue, Guang-Hui,Fan, Xiao-Yan,Yan, De,Yan, Peng-Xun,&Yang, Qiang.(2006).Investigations on preparation and the hall effect of the Cu3N thin films.Rengong Jingti Xuebao/Journal of Synthetic Crystals,35(5),1108-1112.
MLA Wang, Ming-Xu,et al."Investigations on preparation and the hall effect of the Cu3N thin films".Rengong Jingti Xuebao/Journal of Synthetic Crystals 35.5(2006):1108-1112.
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