Effects of defect states on the performance of CuInGaSe2 solar cells

doi:10.1088/1674-4926/35/2/024011

	Effects of defect states on the performance of CuInGaSe2 solar cells
	Wan Fucheng 1; Tang Fuling1,2 ; Xue Hongtao1 ; Lu Wenjiang 1,2; Feng Yudong 2; Rui Zhiyuan1
	2014-02-01
发表期刊	Journal of Semiconductors
ISSN	16744926
卷号	35 期号:2
摘要	Device modeling has been carried out to investigate the effects of defect states on the performance of ideal CuInGaSe2 (CIGS) thin film solar cells theoretically. The varieties of defect states (location in the band gap and densities) in absorption layer CIGS and in buffer layer CdS were examined. The performance parameters: open-circuit voltage, short-circuit current, fill factor, and photoelectric conversion efficiency for different defect states were quantitatively analyzed. We found that defect states always harm the performance of CIGS solar cells, but when defect state density is less than 1014 cm-3 in CIGS or less than 1018 cm -3 in CdS, defect states have little effect on the performances. When defect states are located in the middle of the band gap, they are more harmful. The effects of temperature and thickness are also considered. We found that CIGS solar cells have optimal performance at about 170 K and 2 μm of CIGS is enough for solar light absorption. © 2014 Chinese Institute of Electronics.
关键词	Cadmium sulfide Conversion efficiency Energy gap Open circuit voltage Solar cells Defect state Defect state density Device modeling Effects of temperature Optimal performance Performance parameters Photo-electric conversion efficiency Thin film solar cells
DOI	10.1088/1674-4926/35/2/024011
收录类别	EI ; ESCI
语种	英语
WOS研究方向	Physics
WOS类目	Physics, Condensed Matter
WOS记录号	WOS:000217264300014
出版者	IOS Press, Nieuwe Hemweg 6B, Amsterdam, 1013 BG, Netherlands
EI入藏号	20141117438848
EI主题词	Defects
EI分类号	423 Non Mechanical Properties and Tests of Building Materials ; 525.5 Energy Conversion Issues ; 615.2 Solar Power ; 701.1 Electricity: Basic Concepts and Phenomena ; 804 Chemical Products Generally ; 931.3 Atomic and Molecular Physics ; 951 Materials Science
引用统计	被引频次：18[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	https://ir.lut.edu.cn/handle/2XXMBERH/150428
专题	材料科学与工程学院兰州理工大学省部共建有色金属先进加工与再利用国家重点实验室
通讯作者	Tang Fuling
作者单位	1.Lanzhou Univ Technol, Dept Mat Sci & Engn, State Key Lab Gansu Adv Nonferrous Met Mat, Lanzhou 730050, Gansu, Peoples R China; 2.Lanzhou Inst Phys, Sci & Technol Surface Engn Lab, Lanzhou 730000, Gansu, Peoples R China
第一作者单位	兰州理工大学
通讯作者单位	兰州理工大学
第一作者的第一单位	兰州理工大学
推荐引用方式 GB/T 7714	Wan Fucheng,Tang Fuling,Xue Hongtao,et al. Effects of defect states on the performance of CuInGaSe2 solar cells[J]. Journal of Semiconductors,2014,35(2).
APA	Wan Fucheng,Tang Fuling,Xue Hongtao,Lu Wenjiang,Feng Yudong,&Rui Zhiyuan.(2014).Effects of defect states on the performance of CuInGaSe2 solar cells.Journal of Semiconductors,35(2).
MLA	Wan Fucheng,et al."Effects of defect states on the performance of CuInGaSe2 solar cells".Journal of Semiconductors 35.2(2014).