Construction of a Cu-Sn Heterojunction Interface Derived from a Schottky Junction in Cu@Sn/rGO Composites as a Highly Efficient Dielectric Microwave Absorber

doi:10.1021/acsami.0c22049

IR > 理学院

	Construction of a Cu-Sn Heterojunction Interface Derived from a Schottky Junction in Cu@Sn/rGO Composites as a Highly Efficient Dielectric Microwave Absorber
	Li, Tiantian 1; Xia, Long 1; Yang, Hua2 ; Wang, Xinyu 1; Zhang, Tao 1; Huang, Xiaoxiao 4; Xiong, Li 1; Qin, Chunlin 1; Wen, Guangwu 3
	2021-03-17
发表期刊	ACS APPLIED MATERIALS & INTERFACES
ISSN	1944-8244
卷号	13 期号:10 页码:11911-11919
摘要	Developing high-performance dielectric absorbers, low filler loading, and a broad absorption band remains a great challenge for wireless data communication systems, household appliances, local area network, and so on. Herein, we report a facile green method to design and fabricate a copper-coated tin/reduced graphene oxide (Cu@Sn/rGO) composites with a heterojunction obtained by modifying a Schottky junction. The unique heterojunction can enable an appropriate balance between impedance and strong loss capacity. Meanwhile, it can not only promote the carrier migration but also obtain the rich interfaces. Consequently, a Cu@Sn/rGO composite with a heterojunction exhibits superior absorption intensity, far surpassing that of other absorbing materials reported. With a weight content of only 5 wt %, the maximum absorptivity reaches -49.19 dB at 6.08 GHz, and an effective absorption bandwidth (RL < -10 dB) of 13.94 GHz is achieved when the absorber's thickness ranges from 1.7 to 5.5 mm. This study provides new insights into the design and synthesis of a novel microwave absorption material with lightweight, smaller filler loading, and strong reflection loss.
关键词	Cu@Sn/rGO composites tunable dielectric properties Schottky junction Cu-Sn heterojunction interface strong reflection loss
DOI	10.1021/acsami.0c22049
收录类别	SCIE ; SCOPUS ; EI
语种	英语
WOS研究方向	Science & Technology - Other Topics ; Materials Science
WOS类目	Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
WOS记录号	WOS:000630398500034
出版者	AMER CHEMICAL SOC
EI入藏号	20211410176453
EI主题词	Tin alloys
EI分类号	544.2 Copper Alloys - 546.2 Tin and Alloys - 714.2 Semiconductor Devices and Integrated Circuits - 761 Nanotechnology - 804 Chemical Products Generally - 804.2 Inorganic Compounds - 813.2 Coating Materials
来源库	WOS
引用统计	被引频次：34[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	https://ir.lut.edu.cn/handle/2XXMBERH/148316
专题	理学院
通讯作者	Xia, Long; Huang, Xiaoxiao
作者单位	1.Harbin Inst Technol Weihai, Sch Mat Sci & Engn, Weihai 264209, Peoples R China; 2.Lanzhou Univ Technol, Sch Sci, Lanzhou 730050, Peoples R China; 3.Shandong Univ Technol, Sch Mat Sci & Engn, Zibo 255000, Peoples R China; 4.Harbin Inst Technol, Sch Mat Sci & Engn, Harbin 150001, Peoples R China
推荐引用方式 GB/T 7714	Li, Tiantian,Xia, Long,Yang, Hua,et al. Construction of a Cu-Sn Heterojunction Interface Derived from a Schottky Junction in Cu@Sn/rGO Composites as a Highly Efficient Dielectric Microwave Absorber[J]. ACS APPLIED MATERIALS & INTERFACES,2021,13(10):11911-11919.
APA	Li, Tiantian.,Xia, Long.,Yang, Hua.,Wang, Xinyu.,Zhang, Tao.,...&Wen, Guangwu.(2021).Construction of a Cu-Sn Heterojunction Interface Derived from a Schottky Junction in Cu@Sn/rGO Composites as a Highly Efficient Dielectric Microwave Absorber.ACS APPLIED MATERIALS & INTERFACES,13(10),11911-11919.
MLA	Li, Tiantian,et al."Construction of a Cu-Sn Heterojunction Interface Derived from a Schottky Junction in Cu@Sn/rGO Composites as a Highly Efficient Dielectric Microwave Absorber".ACS APPLIED MATERIALS & INTERFACES 13.10(2021):11911-11919.