The Investigation of Sn heavily doped ZnSe for promising intermediate band materials

doi:10.1016/j.jpcs.2021.109951

	The Investigation of Sn heavily doped ZnSe for promising intermediate band materials
	Yin, Jianbo1,2 ; Zhang, Xingxing 2
	2021-05
发表期刊	JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
ISSN	0022-3697
卷号	152
摘要	First principles were adopted to calculate the electronic structure and optical property of Sn heavily doped ZnSe, and the effects of different Sn doping ratios on the intermediate band structure of ZnSe were also investigated. The study results show that Sn heavily doped ZnSe can give rise to intermediate band structure, which is caused by interaction of all the Se-4s, Se-4p, Sn-5s, Sn-5p and Zn-5s orbitals. When the Sn doping ratio reaches 1/8, a diffused intermediate band structure is formed; and when Sn doping ratio reaches 1/4, ZnSe becomes a P typed semiconductor.
关键词	Zinc selenide Intermediate band Tin doping First principles
DOI	10.1016/j.jpcs.2021.109951
收录类别	SCIE ; SCOPUS ; EI
语种	英语
WOS研究方向	Chemistry ; Physics
WOS类目	Chemistry, Multidisciplinary ; Physics, Condensed Matter
WOS记录号	WOS:000634934300015
出版者	PERGAMON-ELSEVIER SCIENCE LTD
EI入藏号	20210309782775
EI主题词	Semiconducting selenium compounds
EI分类号	546.2 Tin and Alloys - 712.1 Semiconducting Materials - 712.1.2 Compound Semiconducting Materials - 741.1 Light/Optics - 933 Solid State Physics
来源库	WOS
引用统计	被引频次：3[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	https://ir.lut.edu.cn/handle/2XXMBERH/148234
专题	材料科学与工程学院
通讯作者	Yin, Jianbo
作者单位	1.Lanzhou Univ Technol, State Key Lab Adv Proc & Recycling Nonferrous Met, Lanzhou 730050, Peoples R China; 2.Lanzhou Univ Technol, Sch Mat Sci & Engn, Lanzhou 730050, Peoples R China
第一作者单位	省部共建有色金属先进加工与再利用国家重点实验室; 材料科学与工程学院
通讯作者单位	省部共建有色金属先进加工与再利用国家重点实验室; 材料科学与工程学院
第一作者的第一单位	省部共建有色金属先进加工与再利用国家重点实验室
推荐引用方式 GB/T 7714	Yin, Jianbo,Zhang, Xingxing. The Investigation of Sn heavily doped ZnSe for promising intermediate band materials[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,2021,152.
APA	Yin, Jianbo,&Zhang, Xingxing.(2021).The Investigation of Sn heavily doped ZnSe for promising intermediate band materials.JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,152.
MLA	Yin, Jianbo,et al."The Investigation of Sn heavily doped ZnSe for promising intermediate band materials".JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS 152(2021).