Smart Design of Resistive Switching Memory by an In Situ Current-Induced Oxidization Process on a Single Crystalline Metallic Nanowire

doi:10.1002/aelm.202000252

	Smart Design of Resistive Switching Memory by an In Situ Current-Induced Oxidization Process on a Single Crystalline Metallic Nanowire
	Shih, Yu-Chuan 1,2,3; Lee, Ling 1,2,3,4; Liang, Kai-De 1,2,3; Manikandan, Arumugam 1,2,3; Liu, Wen-Wu5 ; Chen, Yu-Ze 6; Chang, Mu-Tung 7; Wang, Zhiming M.4; Chueh, Yu-Lun 1,2,3
	2021-05
发表期刊	ADVANCED ELECTRONIC MATERIALS
ISSN	2199-160X
卷号	7 期号:5 页码:-
摘要	Resistive switching random access memory (ReRAM) has recently generated significant interest due to its potentials used in nanoscale logic, memory devices, and neuromorphic applications. From the device physics, a uniform dielectric layer is necessary to access as the main switching layer to perform stable resistive switching. This, however, makes the fabrication process more challenging. In this regard, a design of resistive switching memory by an in situ current-induced oxidization process on a single crystal metallic nanowire (NW) is demonstrated where a single crystal Cu NW is found as the best material with stable switching behaviors after the in situ current-induced oxidization process. With the in situ current-induced oxidization process by high current density on the Cu NW, a reversible resistive switching up to 100 cycles with a large ON/OFF ratio of >10(3) and a low switching voltage of <0.5 V can be obtained. The initial current-induced oxidation provides a core-shell (Cu2O/Cu) nanowire structure that contributed to the switching properties. The possible switching mechanisms and potential guidelines are systematically proposed. The current work opens up the opportunities to design the ReRAM device with full- metallic materials.
关键词	Copper Copper oxides Nanocrystalline materials Nanowires Oxide minerals RRAM Single crystals Fabrication process High current densities Random access memory Resistive switching Resistive switching memory Switching behaviors Switching mechanism Switching properties
DOI	10.1002/aelm.202000252
收录类别	EI ; SCOPUS ; SCIE
语种	英语
WOS研究方向	Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目	Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号	WOS:000616769300001
出版者	Blackwell Publishing Ltd
EI入藏号	20210709928816
EI主题词	Switching
EI分类号	482.2 Minerals - 544.1 Copper - 761 Nanotechnology - 804.2 Inorganic Compounds - 933 Solid State Physics - 933.1 Crystalline Solids
来源库	WOS
引用统计	被引频次：2[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	https://ir.lut.edu.cn/handle/2XXMBERH/147289
专题	省部共建有色金属先进加工与再利用国家重点实验室
通讯作者	Chueh, Yu-Lun
作者单位	1.Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30013, Taiwan; 2.Natl Tsing Hua Univ, Frontier Res Ctr Fundamental & Appl Sci Matters, Hsinchu 30013, Taiwan; 3.Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 80424, Taiwan; 4.Univ Elect Sci & Technol China, Inst Fundamental & Frontier Sci, Chengdu 610054, Peoples R China; 5.Lanzhou Univ Technol, State Key Lab Adv Proc & Recycling Nonferrous Met, Lanzhou 730050, Peoples R China; 6.Natl Cheng Kung Univ, Dept Mat Sci & Engn, Tainan 701, Taiwan; 7.Ind Technol Res Inst ITRI, Mat & Chem Res Labs, Hsinchu 31040, Taiwan
第一作者单位	理学院
通讯作者单位	理学院
推荐引用方式 GB/T 7714	Shih, Yu-Chuan,Lee, Ling,Liang, Kai-De,et al. Smart Design of Resistive Switching Memory by an In Situ Current-Induced Oxidization Process on a Single Crystalline Metallic Nanowire[J]. ADVANCED ELECTRONIC MATERIALS,2021,7(5):-.
APA	Shih, Yu-Chuan.,Lee, Ling.,Liang, Kai-De.,Manikandan, Arumugam.,Liu, Wen-Wu.,...&Chueh, Yu-Lun.(2021).Smart Design of Resistive Switching Memory by an In Situ Current-Induced Oxidization Process on a Single Crystalline Metallic Nanowire.ADVANCED ELECTRONIC MATERIALS,7(5),-.
MLA	Shih, Yu-Chuan,et al."Smart Design of Resistive Switching Memory by an In Situ Current-Induced Oxidization Process on a Single Crystalline Metallic Nanowire".ADVANCED ELECTRONIC MATERIALS 7.5(2021):-.