An analytical model of contact pressure caused by 2-D wafer topography in chemical-mechanical polishing process

doi:10.1149/1.3694378

IR > 机电工程学院

	An analytical model of contact pressure caused by 2-D wafer topography in chemical-mechanical polishing process
	Wu, Lixiao
	2012
会议名称	China Semiconductor Technology International Conference 2012, CSTIC 2012
会议录名称	ECS Transactions
卷号	44
期号	1
页码	621-628
会议日期	March 18, 2012 - March 19, 2012
会议地点	Shanghai, China
出版者	Electrochemical Society Inc.
摘要	Topography on wafer surface affects chemical-mechanical polishing (CMP) greatly. In this paper, 2-D wafer topography's effects on the contact pressure in CMP are investigated and calculated. It is found that the wafer can be treated as a rigid punch and pad as an elastic half space when the effects of the pattern features on the wafer surface are investigated. Based on the linear small strain theory of elasticity, the formula of calculating the contact pressure between the wafer and the pad is given. The performance of CMP system is shown to be a linear time invariant (LTI) system in a mathematical way. The magnitude spectra and phase spectra of the system are obtained exactly by the formula. The contact pressure for 2-D wafer topography during CMP can be calculated easily by the formula. © The Electrochemical Society.
关键词	Chemical analysis Geometry Polishing Semiconductor device manufacture Silicon wafers Topography Chemical mechanical polishing(CMP) Chemical-mechanical polishing process Contact pressures Elastic half space Linear time-invariant system Magnitude spectrum Pattern features Wafer topography
DOI	10.1149/1.3694378
收录类别	EI
语种	英语
EI入藏号	20134316870699
EI主题词	Chemical mechanical polishing
ISSN	19385862
来源库	Compendex
分类代码	604.2 Machining Operations - 714.2 Semiconductor Devices and Integrated Circuits - 921 Mathematics - 951 Materials Science
引用统计	被引频次[WOS]：0 [WOS记录] [WOS相关记录]
文献类型	会议论文
条目标识符	https://ir.lut.edu.cn/handle/2XXMBERH/115997
专题	机电工程学院
作者单位	School of Mechanical and Electronical Engineering, Lanzhou University of Technology, Lanzhou 730050, China
第一作者单位	兰州理工大学
推荐引用方式 GB/T 7714	Wu, Lixiao. An analytical model of contact pressure caused by 2-D wafer topography in chemical-mechanical polishing process[C]:Electrochemical Society Inc.,2012:621-628.