Unveiling the pinning behavior of charged domain walls in BiFeO3 thin films via vacancy defects

doi:10.1016/j.actamat.2019.12.041

	Unveiling the pinning behavior of charged domain walls in BiFeO3 thin films via vacancy defects
	Geng, W. R.1,2; Tian, X. H.1,2; Jiang, Y. X.1; Zhu, Y. L.1; Tang, Y. L.1; Wang, Y. J.1; Zou, M. J.1,2; Feng, Y. P.1,3; Wu, B.1,2; Hu, W. T.1,2
	2020-03
发表期刊	Acta Materialia
ISSN	13596454
卷号	186 页码:68-76
摘要	Manipulation of electronic states in functional ferroelectrics is promising for next generation electronics devices. The charged domain walls in ferroelectric materials especially facilitate the electronic state modulation and are promising for developing interface-based devices. However, the major challenges impeding the application are their intentional manipulation and the elusive pinning behavior. Here, results that charged domain walls in BiFeO3 films can be pinned and regulated by oxygen vacancy planar distributions controlled by oxygen pressure during film growth are reported. Using aberration-corrected scanning transmission electron microscopy complemented by theoretical simulations, rich pinning behavior of tail-to-tail charged domain walls by oxygen vacancy plates is revealed. At high annealing oxygen pressure, 71° charged domain walls are stabilized by narrow vacancy plates. Decreasing the oxygen pressure, the transformation from 71° to 109° charged domain walls happens by expanding the vacancy plates, as collaborated by phase field simulations. Besides, the 71°-109° charged domain wall pairs are stabilized due to further interaction between two neighboring vacancy plates. These results provide the active modulation of the electronic states and illuminate the rich pinning behavior of domain walls by vacancy defects in ferroelectrics, which in turn could provide implications for designing potential electronics devices. © 2020 Acta Materialia Inc.
关键词	Bismuth compounds Defects Domain walls Electric field measurement Electronic states Ferroelectric materials Film growth High resolution transmission electron microscopy Interface states Iron compounds Modulation Oxygen Scanning electron microscopy Thin films Transmissions Aberration-corrected scanning transmission electron microscopies BiFeO3 thin film Charged domain wall Electronics devices Oxygen pressure Phase-field simulation Theoretical simulation Vacancy Defects
DOI	10.1016/j.actamat.2019.12.041
收录类别	EI ; SCIE
语种	英语
WOS研究方向	Materials Science ; Metallurgy & Metallurgical Engineering
WOS类目	Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering
WOS记录号	WOS:000518698300007
出版者	Acta Materialia Inc
EI入藏号	20200207997930
EI主题词	Oxygen vacancies
EI分类号	602.2 Mechanical Transmissions - 708.1 Dielectric Materials - 741.3 Optical Devices and Systems - 804 Chemical Products Generally - 931 Classical Physics ; Quantum Theory ; Relativity - 932 High Energy Physics ; Nuclear Physics ; Plasma Physics - 933.1 Crystalline Solids - 933.3 Electronic Structure of Solids - 942.2 Electric Variables Measurements - 951 Materials Science
来源库	Compendex
分类代码	602.2 Mechanical Transmissions - 708.1 Dielectric Materials - 741.3 Optical Devices and Systems - 804 Chemical Products Generally - 931 Classical Physics; Quantum Theory; Relativity - 932 High Energy Physics; Nuclear Physics; Plasma Physics - 933.1 Crystalline Solids - 933.3 Electronic Structure of Solids - 942.2 Electric Variables Measurements - 951 Materials Science
引用统计	被引频次：18[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	https://ir.lut.edu.cn/handle/2XXMBERH/115822
专题	兰州理工大学
通讯作者	Zhu, Y. L.; Ma, X. L.
作者单位	1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Wenhua Rd 72, Shenyang 110016, Peoples R China; 2.Univ Sci & Technol China, Jinzhai Rd 96, Hefei 230026, Peoples R China; 3.Univ Chinese Acad Sci, Yuquan Rd 19, Beijing 100049, Peoples R China; 4.Lanzhou Univ Technol, State Key Lab Adv Proc & Recycling Nonferrous Met, Langongping Rd 287, Lanzhou 730050, Peoples R China
通讯作者单位	省部共建有色金属先进加工与再利用国家重点实验室
推荐引用方式 GB/T 7714	Geng, W. R.,Tian, X. H.,Jiang, Y. X.,et al. Unveiling the pinning behavior of charged domain walls in BiFeO3 thin films via vacancy defects[J]. Acta Materialia,2020,186:68-76.
APA	Geng, W. R..,Tian, X. H..,Jiang, Y. X..,Zhu, Y. L..,Tang, Y. L..,...&Ma, X. L..(2020).Unveiling the pinning behavior of charged domain walls in BiFeO3 thin films via vacancy defects.Acta Materialia,186,68-76.
MLA	Geng, W. R.,et al."Unveiling the pinning behavior of charged domain walls in BiFeO3 thin films via vacancy defects".Acta Materialia 186(2020):68-76.