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Design of hole-transport-material free CH3NH3PbI3/CsSnI3 all-perovskite heterojunction efficient solar cells by device simulation
Duan, Qianqian1,2; Ji, Junyang1,2; Hong, Xin1,2; Fu, Yichao1,2; Wang, Chenyang1,2; Zhou, Kai1,2; Liu, Xueqin1,2; Yang, Hua3; Wang, Zhi-Yong4
2020-05-01
发表期刊Solar Energy
ISSN0038092X
卷号201页码:555-560
摘要The hole-transport-material (HTM) free perovskite solar cells (PSCs) have drawn great attentions due to the simple structure, low fabrication cost and long term stability. However, the photoelectric conversion efficiency (PCE) of the HTM-free PCSs are still low comparing with the traditional sandwich type PSCs. In this work, a new HTM-free PSC is proposed with CH3NH3PbI3/CsSnI3 all-perovskite heterojunction as light-harvester and carbon as back electrode through simulation using the wxAMPS tools. The results are analyzed and compared with the traditional HTM-free perovskite solar cells. It reveals that the narrow band gap CsSnI3 broadens the absorption spectrum to near-infrared region and the high hole mobility favors efficient hole transfer. The optimal performance is achieved as Voc = 1.08 eV, Jsc = 25.33 mA/cm2, FF = 79.27%, PCE = 21.64%. Comparing to the bare CH3NH3PbI3 absorbing layer, the device efficiency of CH3NH3PbI3/CsSnI3 heterojunction is improved from 18.29% to 21.64%. This indicates that the proposed HTM-free PSC is promising for future photovoltaic and optoelectronics applications. © 2020 International Solar Energy Society
关键词Absorption spectroscopy Efficiency Energy gap Heterojunctions Hole mobility Infrared devices Lead compounds Perovskite Photoelectricity Tin compounds Device simulations Hole transport materials HTM-free Long term stability Near infrared region Optimal performance Photo-electric conversion efficiency Simulation
DOI10.1016/j.solener.2020.03.037
收录类别EI ; SCIE
语种英语
WOS研究方向Energy & Fuels
WOS类目Energy & Fuels
WOS记录号WOS:000525783500052
出版者Elsevier Ltd
EI入藏号20201208332179
EI主题词Perovskite solar cells
EI分类号482.2 Minerals - 701.1 Electricity: Basic Concepts and Phenomena - 712.1 Semiconducting Materials - 714.2 Semiconductor Devices and Integrated Circuits - 913.1 Production Engineering
来源库Compendex
分类代码482.2 Minerals - 701.1 Electricity: Basic Concepts and Phenomena - 712.1 Semiconducting Materials - 714.2 Semiconductor Devices and Integrated Circuits - 913.1 Production Engineering
引用统计
被引频次:97[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符https://ir.lut.edu.cn/handle/2XXMBERH/115681
专题理学院
通讯作者Liu, Xueqin
作者单位1.Chongqing Univ Technol, Sch Sci, Chongqing 400054, Peoples R China;
2.Chongqing Key Lab Green Energy Mat Technol & Syst, Chongqing 400054, Peoples R China;
3.Lanzhou Univ Technol, State Key Lab Adv Proc & Recycling Nonferrous Met, Lanzhou 730050, Peoples R China;
4.Southwest Univ, Sch Phys Sci & Technol, Chongqing 400715, Peoples R China
第一作者单位理学院
通讯作者单位理学院
第一作者的第一单位理学院
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GB/T 7714
Duan, Qianqian,Ji, Junyang,Hong, Xin,et al. Design of hole-transport-material free CH3NH3PbI3/CsSnI3 all-perovskite heterojunction efficient solar cells by device simulation[J]. Solar Energy,2020,201:555-560.
APA Duan, Qianqian.,Ji, Junyang.,Hong, Xin.,Fu, Yichao.,Wang, Chenyang.,...&Wang, Zhi-Yong.(2020).Design of hole-transport-material free CH3NH3PbI3/CsSnI3 all-perovskite heterojunction efficient solar cells by device simulation.Solar Energy,201,555-560.
MLA Duan, Qianqian,et al."Design of hole-transport-material free CH3NH3PbI3/CsSnI3 all-perovskite heterojunction efficient solar cells by device simulation".Solar Energy 201(2020):555-560.
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