Institutional Repository of Coll Sci
| Lattice disorder produced in GaN by He-ion implantation | |
| Han, Yi1,2; Peng, Jinxin3; Li, Bingsheng1; Wang, Zhiguang1; Wei, Kongfang1; Shen, Tielong1; Sun, Jianrong1; Zhang, Limin3; Yao, Cunfeng1; Gao, Ning1 | |
| 2017-09 | |
| 发表期刊 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
 |
| ISSN | 0168-583X |
| 卷号 | 406页码:543-547 |
| 摘要 | The lattice disorders induced by He-ion implantation in GaN epitaxial films to fluences of 2 x 10(16), 5 x 10(16) and 1 x 10(17) cm(-2) at room temperature (RT) have been investigated by a combination of Raman spectroscopy, high-resolution X-ray diffraction (HRXRD), nano-indentation, and transmission electron microscopy (TEM). The experimental results present that Raman intensity decreases with increasing fluence. Raman frequency "red shift" occurs after He-ion implantation. Strain increases with increasing fluence. The hardness of the highly damaged layer increases monotonically with increasing fluence. Microstructural results demonstrate that the width of the damage band and the number density of observed dislocation loops increases with increasing fluence. High-resolution TEM images exhibit that He-ion implantation lead to the formation of planar defects and most of the lattice defects are of interstitial-type basal loops. The relationships of Raman intensity, lattice strain, swelling and hardness with He-implantation-induced lattice disorders are discussed. (C) 2016 Elsevier B.V. All rights reserved. |
| 关键词 | He-ion implantation GaN Microstructure Lattice disorder Lattice strain |
| DOI | 10.1016/j.nimb.2016.12.039 |
| 收录类别 | SCI ; SCIE ; CPCI |
| 语种 | 英语 |
| 资助项目 | National Natural Science Foundation of China[11475229] ; National Natural Science Foundation of China[91426301] ; National Natural Science Foundation of China[11305081] |
| WOS研究方向 | Instruments & Instrumentation ; Nuclear Science & Technology ; Physics |
| WOS类目 | Instruments & Instrumentation ; Nuclear Science & Technology ; Physics, Atomic, Molecular & Chemical ; Physics, Nuclear |
| WOS记录号 | WOS:000407659500028 |
| 出版者 | ELSEVIER SCIENCE BV |
| EI入藏号 | 20170203234630 |
| EI主题词 | High resolution transmission electron microscopy |
| EI分类号 | 531.2 Metallography - 741.3 Optical Devices and Systems - 951 Materials Science |
| 引用统计 | |
| 文献类型 | 期刊论文 |
| 条目标识符 | https://ir.lut.edu.cn/handle/2XXMBERH/33139 |
| 专题 | 理学院 省部共建有色金属先进加工与再利用国家重点实验室 |
| 通讯作者 | Li, Bingsheng |
| 作者单位 | 1.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China; 2.China Grad Univ Chinese Acad Sci, Beijing 100049, Peoples R China; 3.Lanzhou Univ, Sch Nucl Sci & Technol, Lanzhou 730000, Gansu, Peoples R China; 4.Lanzhou Univ Technol, Sch Sci, Dept Phys, Lanzhou 730050, Gansu, Peoples R China |
| 推荐引用方式 GB/T 7714 | Han, Yi,Peng, Jinxin,Li, Bingsheng,et al. Lattice disorder produced in GaN by He-ion implantation[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2017,406:543-547. |
| APA | Han, Yi.,Peng, Jinxin.,Li, Bingsheng.,Wang, Zhiguang.,Wei, Kongfang.,...&He, Wenhao.(2017).Lattice disorder produced in GaN by He-ion implantation.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,406,543-547. |
| MLA | Han, Yi,et al."Lattice disorder produced in GaN by He-ion implantation".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 406(2017):543-547. |
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| Han-2017-Lattice dis（2276KB） | 期刊论文 | 出版稿 | 开放获取 | CC BY-NC-SA | 浏览 下载 | |
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