Structure, Stability, and Electronic Properties of Hydrogenated Monolayer 2D Silicon Allotropes by First-Principles Calculation
Zhang, Haimin1,2,3; Luo, Yongchun1,2; Tang, Fuling1,2; Lin, Boyang2; Wu, Chen2
2022
发表期刊Physica Status Solidi (B) Basic Research
ISSN0370-1972
卷号260期号:2
摘要Due to silicon having a sp3 hybridization configuration in nature, most monolayer 2D silicon allotropes have to be proposed based on the dumbbell-like units to ensure their structural stability. Herein, hydrogenated monolayer 2D silicon allotropes are predicted, and the sp3 configuration of structures is guaranteed by covering the surface with hydrogen. Compared with the corresponding hydrogen-free structures and the hydrogen-free structures on Ag(111) substrate, these predicted structures have lower formation energies, indicating that these monolayer 2D silicon allotropes can be obtained by hydrogenation reactions. These predicted structures are all dynamically stable and structures SCH, HPH, and HDH are thermodynamically stable. The structure SLH is the transition-state structure of structure SCH and structures OTQTH and HHKH are metastable structures. The stable and metastable structures are all semiconductors and can be applied to semiconductor devices. All of these monolayer 2D silicon allotropes have high gravimetric hydrogen contents and may have applications for chemical hydrogen storage or water-enabled H2 production. It is believed that the results of this work have a good reference value for the experimental synthesis of hydrogenated monolayer 2D silicon allotropes, and have reference significance for understanding the diversity and electronic properties of hydrogenated monolayer 2D silicon allotropes. © 2022 Wiley-VCH GmbH.
关键词Calculations Electronic properties Hydrogen production Hydrogen storage Hydrogenation Semiconductor devices Silicon Stability 2d silicon allotrope Dumbbell likes First principle calculations First principles First-principle prediction Free structures Hybridisation Metastable structures Structural stabilities Structure stability
DOI10.1002/pssb.202200426
收录类别EI ; SCIE
语种英语
WOS研究方向Physics
WOS类目Physics, Condensed Matter
WOS记录号WOS:000913987000001
出版者John Wiley and Sons Inc
EI入藏号20224913213691
EI主题词Monolayers
EI分类号522 Gas Fuels ; 549.3 Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals ; 714.2 Semiconductor Devices and Integrated Circuits ; 802.2 Chemical Reactions ; 921 Mathematics
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被引频次:1[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符https://ir.lut.edu.cn/handle/2XXMBERH/160755
专题材料科学与工程学院
理学院
作者单位1.State Key Laboratory of Advanced Processing and Recycling of Nonferrous Metals, Lanzhou University of Technology, Lanzhou; 730050, China;
2.School of Materials Science and Engineering, Lanzhou University of Technology, Lanzhou; 730050, China;
3.School of Science, Lanzhou University of Technology, Lanzhou; 730050, China
第一作者单位兰州理工大学;  材料科学与工程学院
第一作者的第一单位兰州理工大学
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Zhang, Haimin,Luo, Yongchun,Tang, Fuling,et al. Structure, Stability, and Electronic Properties of Hydrogenated Monolayer 2D Silicon Allotropes by First-Principles Calculation[J]. Physica Status Solidi (B) Basic Research,2022,260(2).
APA Zhang, Haimin,Luo, Yongchun,Tang, Fuling,Lin, Boyang,&Wu, Chen.(2022).Structure, Stability, and Electronic Properties of Hydrogenated Monolayer 2D Silicon Allotropes by First-Principles Calculation.Physica Status Solidi (B) Basic Research,260(2).
MLA Zhang, Haimin,et al."Structure, Stability, and Electronic Properties of Hydrogenated Monolayer 2D Silicon Allotropes by First-Principles Calculation".Physica Status Solidi (B) Basic Research 260.2(2022).
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