Gas flow simulation research on reaction chamber of reactive ion etching

doi:10.1117/12.2512222

IR > 新能源学院

	Gas flow simulation research on reaction chamber of reactive ion etching
	Zhang, Jingwen1,2,3,4 ; Bin, Fan 1; Li, Zhiwei 1; Liu, Xin 1; Li, Bincheng 2; Yu, Han 1; Chang, Gong 1,3
	2019
会议名称	9th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Meta-Surface-Wave and Planar Optics
会议录名称	Proceedings of SPIE - The International Society for Optical Engineering
卷号	10841
会议日期	June 26, 2018 - June 29, 2018
会议地点	Chengdu, China
出版者	SPIE
摘要	Gas flow distribution of reaction chamber of reactive ion etching (RIE) etcher is usually considered to be a main factor in determining both the plasma distribution and etching uniformity. Based on the continuum fluid and heat transfer models of the commercial software, Fluent(Ansys), the gas flow distribution of the reaction chamber was simulated. And then the spatial distribution profiles of the pressures above the electrode surface under the different mass flow (50∼250sccm) inlet conditions, and the influence of the different GAP (L = 0.03∼0.06m) of the chambers on the gas flow uniformity were discussed. The result shows that the pressure distribution above the electrode has the character which the pressure is higher in the center of the electrode and lower at the edge and increases with the rise of the mass flow of inlet. And the uniformity of the gas flow distribution is enhanced with the rise of the GAP of the chamber. © 2019 SPIE.
关键词	Computer simulation Electrodes Gases Heat transfer Ions Manufacture Mass transfer Pressure distribution Reactive ion etching Surface waves Commercial software Distribution profiles Electrode surfaces Etching uniformity Fluent(Ansys) Gas flow distribution Heat transfer model Plasma distribution
DOI	10.1117/12.2512222
收录类别	EI
语种	英语
EI入藏号	20190706489081
EI主题词	Flow of gases
ISSN	0277786X
来源库	Compendex
分类代码	537.1 Heat Treatment Processes - 631.1.2 Gas Dynamics - 641.2 Heat Transfer - 641.3 Mass Transfer - 723.5 Computer Applications - 802.2 Chemical Reactions - 931.1 Mechanics
引用统计	被引频次[WOS]：0 [WOS记录] [WOS相关记录]
文献类型	会议论文
条目标识符	https://ir.lut.edu.cn/handle/2XXMBERH/118147
专题	新能源学院能源与动力工程学院
作者单位	1.Institute of Optics and Electronics, Chinese Academy of Sciences, Chengdu; 610209, China; 2.School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu; 610054, China; 3.University of Chinese Academy of Sciences, Beijing; 100049, China; 4.School of Energy and Power Engineering, Lanzhou University of Technology, Lan Zhou; 730050, China
第一作者单位	新能源学院
推荐引用方式 GB/T 7714	Zhang, Jingwen,Bin, Fan,Li, Zhiwei,et al. Gas flow simulation research on reaction chamber of reactive ion etching[C]:SPIE,2019.