Photocatalytic, Fenton and photo-Fenton degradation of RhB over Z-scheme g-C3N4/LaFeO3 heterojunction photocatalysts
Ye, Yongchun1,2; Yang, Hua1,2; Wang, Xiangxian2; Feng, Wangjun2
2018-08
发表期刊MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
ISSN1369-8001
卷号82页码:14-24
摘要Z-scheme g-C3N4/LaFeO3 heterojunction photocatalysts were prepared by calcining the uniformly mixed g-C3N4 nanosheets and LaFeO3 nanoparticles at 300 degrees C for 1 h. The as-prepared g-C3N4/LaFeO3 composites were systematically characterized by XRD, SEM, TEM, XPS, UV-vis DRS, PL spectroscopy, EIS and photocurrent response. It is demonstrated that LaFeO3 nanoparticles (average size: ca. 35 nm) are uniformly assembled onto the surface of g-C3N4 nanosheets through chemical bonding, leading to the formation of g-C3N4/LaFeO3 heterojunctions. The photocatalytic, Fenton and photo-Fenton performances of the samples were investigated by degrading RhB using simulated sunlight as the light source. Compared to bare LaFeO3 and g-C3N4, the g-C3N4/LaFeO3 composites exhibit significantly enhanced photocatalytic and photo-Fenton degradation of the dye, and the maximum activity is observed for the 15% g-C3N4/LaFeO3 composite. Moreover, the photo-Fenton performance of the composites is much higher than the photocatalytic or Fenton performances. The much improved photo-fenton activity is ascribed to the efficient separation of photogenerated electron-hole pairs due to the Z-scheme electron transfer and the synergistic effect between LaFeO3 and g-C3N4. center dot OH radicals were examined by PL spectroscopy using TPA as a probe molecule, clearly revealing the center dot OH generation, and moreover, the center dot OH yield and the dye degradation rate show a similar variation between different cases of the catalysis process. This suggested that center dot OH is the dominant reactive species causing the dye degradation. The underlying photo-Fenton mechanism of the composites is discussed.
关键词LaFeO3 nanoparticles g-C3N4 nanosheets g-C3N4/LaFeO3 heterojunction Catalytic activity Photo-Fenton mechanism
DOI10.1016/j.mssp.2018.03.033
收录类别SCI ; SCIE
语种英语
资助项目National Natural Science Foundation of China[51662027]
WOS研究方向Engineering ; Materials Science ; Physics
WOS类目Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS记录号WOS:000429746600003
出版者ELSEVIER SCI LTD
EI入藏号20181404973469
EI主题词Lanthanum compounds
EI分类号714.2 Semiconductor Devices and Integrated Circuits - 761 Nanotechnology - 801.4 Physical Chemistry - 802.2 Chemical Reactions - 803 Chemical Agents and Basic Industrial Chemicals - 804 Chemical Products Generally - 933 Solid State Physics
引用统计
被引频次:147[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符https://ir.lut.edu.cn/handle/2XXMBERH/32521
专题省部共建有色金属先进加工与再利用国家重点实验室
理学院
通讯作者Yang, Hua
作者单位1.Lanzhou Univ Technol, State Key Lab Adv Proc & Recycling Nonferrous Met, Lanzhou 730050, Gansu, Peoples R China;
2.Lanzhou Univ Technol, Sch Sci, Lanzhou 730050, Gansu, Peoples R China
第一作者单位省部共建有色金属先进加工与再利用国家重点实验室;  理学院
通讯作者单位省部共建有色金属先进加工与再利用国家重点实验室;  理学院
第一作者的第一单位省部共建有色金属先进加工与再利用国家重点实验室
推荐引用方式
GB/T 7714
Ye, Yongchun,Yang, Hua,Wang, Xiangxian,et al. Photocatalytic, Fenton and photo-Fenton degradation of RhB over Z-scheme g-C3N4/LaFeO3 heterojunction photocatalysts[J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2018,82:14-24.
APA Ye, Yongchun,Yang, Hua,Wang, Xiangxian,&Feng, Wangjun.(2018).Photocatalytic, Fenton and photo-Fenton degradation of RhB over Z-scheme g-C3N4/LaFeO3 heterojunction photocatalysts.MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,82,14-24.
MLA Ye, Yongchun,et al."Photocatalytic, Fenton and photo-Fenton degradation of RhB over Z-scheme g-C3N4/LaFeO3 heterojunction photocatalysts".MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 82(2018):14-24.
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