Crystal structure analysis of self-catalyzed InAs nanowire grown by MOCVD

doi:10.1016/j.jallcom.2024.174312

	Crystal structure analysis of self-catalyzed InAs nanowire grown by MOCVD
	Wang, Xiaoye1,2,3,4 ; Pan, Huayong 5; Yang, Xiaoguang 6,7; Yang, Tao 6,7
	2024-06-15
发表期刊	Journal of Alloys and Compounds
ISSN	0925-8388
卷号	988
摘要	We studied the crystal structure of self-catalyzed InAs nanowires with different diameters grown on Si Substrate by metal-organic chemical vapor deposition (MOCVD) and found that oxidation degree and nanowire diameter directly affect the lattice structure of InAs nanowire. In the non-oxidized state of InAs nanowires, when the diameter is greater than 160 nm, the lattice structure is mainly cubic zinc blende (ZB) structure. When the diameter is between 121 nm and 80 nm, ZB structure and hexagonal wurtzite (WZ) structure coexist. When the diameter is less than 66 nm, the lattice structure is mainly WZ structure. In the fully oxidized state of InAs nanowires, a stable layer of In2O3 is formed on its surface, and InAsO4 will be formed inside due to infiltrated oxygen atoms. When InAs nanowires are made into nanoelectronic devices as the core material, if oxidation is not prevented, InAs material with excellent electrical conductivity will also become InAsO4. © 2024 Elsevier B.V.
关键词	Catalysis Coremaking III-V semiconductors Indium arsenide Metallorganic chemical vapor deposition Nanowires Organic chemicals Organometallics Oxidation Zinc Zinc sulfide Hexagonal wurtzite Inas nanowire Lattice structures Metal-organic chemical vapour depositions Oxidized state Self-catalyzed Self-catalyzed growth Surface oxide layer Zinc blende Zinc-blende structures
DOI	10.1016/j.jallcom.2024.174312
收录类别	EI
语种	英语
出版者	Elsevier Ltd
EI入藏号	20241415845013
EI主题词	Crystal structure
EI分类号	534.2 Foundry Practice ; 546.3 Zinc and Alloys ; 712.1 Semiconducting Materials ; 761 Nanotechnology ; 802.2 Chemical Reactions ; 804.1 Organic Compounds ; 804.2 Inorganic Compounds ; 933 Solid State Physics ; 933.1.1 Crystal Lattice
原始文献类型	Journal article (JA)
引用统计	无
文献类型	期刊论文
条目标识符	https://ir.lut.edu.cn/handle/2XXMBERH/170245
专题	电气工程与信息工程学院
通讯作者	Wang, Xiaoye
作者单位	1.College of Electrical and Information Engineering, Lanzhou University of Technology, Lanzhou; 730050, China; 2.Key Laboratory of Gansu Advanced Control for Industrial Processes, Lanzhou University of Technology, Lanzhou; 730050, China; 3.National Demonstration Center for Experimental Electrical and Control Engineering Education, Lanzhou University of Technology, Lanzhou; 730050, China; 4.Laboratory of Nanoscale Semiconductor Measurement, Lanzhou University of Technology, Lanzhou; 730050, China; 5.Bejing Key Laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices, and Department of Electronics, Peking University, Beijing; 100871, China; 6.Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing; 100083, China; 7.College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing; 100049, China
第一作者单位	兰州理工大学
通讯作者单位	兰州理工大学
第一作者的第一单位	兰州理工大学
推荐引用方式 GB/T 7714	Wang, Xiaoye,Pan, Huayong,Yang, Xiaoguang,et al. Crystal structure analysis of self-catalyzed InAs nanowire grown by MOCVD[J]. Journal of Alloys and Compounds,2024,988.
APA	Wang, Xiaoye,Pan, Huayong,Yang, Xiaoguang,&Yang, Tao.(2024).Crystal structure analysis of self-catalyzed InAs nanowire grown by MOCVD.Journal of Alloys and Compounds,988.
MLA	Wang, Xiaoye,et al."Crystal structure analysis of self-catalyzed InAs nanowire grown by MOCVD".Journal of Alloys and Compounds 988(2024).