Single-Dislocation Schottky Diodes

doi:10.1021/acs.nanolett.1c01081

	Single-Dislocation Schottky Diodes
	Tao, Ang 1,2; Yao, Tingting 1,2; Jiang, Yixiao 1,2; Yang, Lixin 1; Yan, Xuexi 1; Ohta, Hiromichi 3; Ikuhara, Yuichi 4,5,6; Chen, Chunlin 1,2; Ye, Hengqiang 2; Ma, Xiuliang1,7
	2021-07-14
发表期刊	NANO LETTERS
ISSN	1530-6984
卷号	21 期号:13 页码:5586-5592
摘要	Dislocations often exhibit unique physical properties distinct from those of the bulk material. However, functional applications of dislocations are challenging due to difficulties in the construction of high-performance devices of dislocations. Here we demonstrate unidirectional single-dislocation Schottky diode arrays in a Fe2O3 thin film on Nb-doped SrTiO3 substrates. Conductivity measurements using conductive atomic force microscopy indicate that a net current will flow through individual dislocation Schottky diodes under forward bias and disappear under reverse bias. Under cyclic bias voltages, the single-dislocation Schottky diodes exhibit a distinct resistive switching behavior containing low-resistance and high-resistance states with a high resistance ratio of similar to 10(3). A combined study of transmission electron microscopy and first-principles calculations reveals that the Fe2O3 dislocations comprise mixed Fe2+ and Fe3+ ions due to O deficiency and exhibit a one-dimensional electrical conductivity. The single-dislocation Schottky diodes may find applications for developing ultrahigh-density electronic and memory devices.
关键词	dislocation Schottky diode conductive atomic force microscopy transmission electron microscopy first-principles calculations
DOI	10.1021/acs.nanolett.1c01081
收录类别	EI ; SCOPUS ; SCIE
语种	英语
WOS研究方向	Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目	Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS记录号	WOS:000674354200019
出版者	AMER CHEMICAL SOC
EI入藏号	20212910652119
EI主题词	Schottky barrier diodes
EI分类号	482.2 Minerals - 714.2 Semiconductor Devices and Integrated Circuits - 741.3 Optical Devices and Systems - 804 Chemical Products Generally - 921 Mathematics
来源库	WOS
引用统计	被引频次：4[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	https://ir.lut.edu.cn/handle/2XXMBERH/148551
专题	材料科学与工程学院_特聘教授组
通讯作者	Chen, Chunlin; Ma, Xiuliang
作者单位	1.Chinese Acad Sci, Univ Sci & Technol China, Sch Mat Sci & Engn, Inst Met Res,Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China; 2.Ji Hua Lab, Foshan 528200, Peoples R China; 3.Hokkaido Univ, Res Inst Elect Sci, Sapporo, Hokkaido 0010020, Japan; 4.Tohoku Univ, Adv Inst Mat Res, Sendai, Miyagi 9808577, Japan; 5.Univ Tokyo, Inst Engn Innovat, Tokyo 1138656, Japan; 6.Japan Fine Ceram Ctr, Nanostruct Res Lab, Nagoya, Aichi 4568587, Japan; 7.Lanzhou Univ Technol, State Key Lab Adv Proc & Recycling Nonferrous Met, Lanzhou 730050, Peoples R China
通讯作者单位	省部共建有色金属先进加工与再利用国家重点实验室
推荐引用方式 GB/T 7714	Tao, Ang,Yao, Tingting,Jiang, Yixiao,et al. Single-Dislocation Schottky Diodes[J]. NANO LETTERS,2021,21(13):5586-5592.
APA	Tao, Ang.,Yao, Tingting.,Jiang, Yixiao.,Yang, Lixin.,Yan, Xuexi.,...&Ma, Xiuliang.(2021).Single-Dislocation Schottky Diodes.NANO LETTERS,21(13),5586-5592.
MLA	Tao, Ang,et al."Single-Dislocation Schottky Diodes".NANO LETTERS 21.13(2021):5586-5592.