Turning electronic performance and Schottky barrier of graphene/β-Si3N4 (0001) heterostructure by external strain and electric field
Lu, Xuefeng; Li, Lingxia; Luo, Jianhua; Guo, Xin; Ren, Junqiang; Xue, Hongtao; Li, Hui
2021-06
发表期刊Vacuum
ISSN0042-207X
卷号188
摘要Graphene-based van der Waals (vdW) heterostructures have currently emerged as a promising application in the construction of next-generation electronic and optoelectronic devices. In this present contribution, through the comprehensive first-principle calculations, the electronic characteristics along with the Schottky barrier of graphene/β-silicon nitride(0001) heterostructure are theoretically investigated, considering external strain and electric fields effects. The results concluded that the electronic performance of both the graphene monolayer and β-Si3N4(0001) surface are perfectly maintained in the heterostructure on account of a weak interlayer vdW force between them. Furthermore, the graphene/β-Si3N4 (0001) heterostructure forms a p-type Schottky contact with the SBH of 0.72 eV, which can be modified by using normal strain or perpendicular electric field. It is found that the heterostructure still maintains a p-type Schottky contact when the interlayer spacing from 2.2 Å to 4.4 Å or when the applied positive electric field is smaller than 0.2 V/Å. Most importantly, a transformation from the p-type Schottky contact to Ohmic one is observed in the heterostructure at an electric field of +0.2 V/Å. The above results are expected to provide a practical guidance for designing and fabrication of the novel nanoelectronic devices based on graphene/β-Si3N4 vdW heterostructure. © 2021
关键词Optoelectronic devices Schottky barrier diodes Van der Waals forces Electronic performance Electronics devices External strains First principle calculations Optoelectronics devices P-type Schottky barriers Schottky contacts Si$-3$/N$-4$ Van der Waal
DOI10.1016/j.vacuum.2021.110208
收录类别EI ; SCIE
语种英语
WOS研究方向Materials Science ; Physics
WOS类目Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号WOS:000649683500003
出版者Elsevier Ltd
EI入藏号20211210126184
EI主题词Graphene
EI分类号714.2 Semiconductor Devices and Integrated Circuits ; 741.3 Optical Devices and Systems ; 761 Nanotechnology ; 801.4 Physical Chemistry ; 804 Chemical Products Generally ; 931.3 Atomic and Molecular Physics
来源库WOS
引用统计
被引频次:2[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符https://ir.lut.edu.cn/handle/2XXMBERH/148453
专题材料科学与工程学院
省部共建有色金属先进加工与再利用国家重点实验室
通讯作者Guo, Xin
作者单位Lanzhou Univ Technol, State Key Lab Adv Proc & Recycling Nonferrous Met, Dept Mat Sci & Engn, Lanzhou 730050, Peoples R China
第一作者单位省部共建有色金属先进加工与再利用国家重点实验室
通讯作者单位省部共建有色金属先进加工与再利用国家重点实验室
第一作者的第一单位省部共建有色金属先进加工与再利用国家重点实验室
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GB/T 7714
Lu, Xuefeng,Li, Lingxia,Luo, Jianhua,et al. Turning electronic performance and Schottky barrier of graphene/β-Si3N4 (0001) heterostructure by external strain and electric field[J]. Vacuum,2021,188.
APA Lu, Xuefeng.,Li, Lingxia.,Luo, Jianhua.,Guo, Xin.,Ren, Junqiang.,...&Li, Hui.(2021).Turning electronic performance and Schottky barrier of graphene/β-Si3N4 (0001) heterostructure by external strain and electric field.Vacuum,188.
MLA Lu, Xuefeng,et al."Turning electronic performance and Schottky barrier of graphene/β-Si3N4 (0001) heterostructure by external strain and electric field".Vacuum 188(2021).
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