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Construction of NiSe2/BiVO4 Schottky junction derived from work function discrepancy for boosting photocatalytic activity
Shen, Shijie1,2; Zhang, Huanhuan1; Xu, Aijiao1; Zhao, YuYi1; Lin, Zhiping1; Wang, Zongpeng1; Zhong, Wenwu1; Feng, Shangshen3
2021-09-15
发表期刊Journal of Alloys and Compounds
ISSN0925-8388
卷号875
摘要The rapid recombination of photogenerated carriers limits the photocatalytic activity of BiVO4. Here, we grew NiSe2 nanosheets on the surface of BiVO4 through a facile solvothermal method to construct a Schottky junction. Due to the discrepancy of work function, electrons at the interface are transferred from BiVO4 to NiSe2, thereby forming a built-in electric field. In virtue of the built-in electric field and the good conductivity of NiSe2, the photo-generated carriers can be quickly separated and transferred. In addition, the interaction at the interface reduces the band gap of BiVO4, which increases the absorption of visible light. These above benefits improve the photocatalytic performance. The photocatalytic reaction under visible light shows that the degradation rate of RhB for 9 mol% NiSe2 composited BiVO4 increases by 11 times compared with pure BiVO4. The simplicity of the preparation method and the significantly improved performance show the enormous potential of NiSe2 to be coupled with other semiconductor photocatalysts to improve their catalytic activity. © 2021 Elsevier B.V.
关键词Catalyst activity Degradation Electric fields Energy gap Light Nickel compounds Phosphorus compounds Photocatalytic activity Rhodium compounds Selenium compounds Semiconductor junctions Vanadium compounds Work function Built-in electric fields Co catalysts Photocatalytic activities Photocatalytic performance Photocatalytic reactions Photogenerated carriers Reaction under Schottky junctions Solvothermal method Visible light
DOI10.1016/j.jallcom.2021.160071
收录类别EI ; SCIE
语种英语
WOS研究方向Chemistry ; Materials Science ; Metallurgy & Metallurgical Engineering
WOS类目Chemistry, Physical ; Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering
WOS记录号WOS:000657525100005
出版者Elsevier Ltd
EI入藏号20211810295022
EI主题词Bismuth compounds
EI分类号701.1 Electricity: Basic Concepts and Phenomena ; 714.2 Semiconductor Devices and Integrated Circuits ; 741.1 Light/Optics ; 801.4 Physical Chemistry ; 802.2 Chemical Reactions ; 803 Chemical Agents and Basic Industrial Chemicals ; 804 Chemical Products Generally ; 931.3 Atomic and Molecular Physics ; 931.4 Quantum Theory ; Quantum Mechanics
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被引频次:23[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符https://ir.lut.edu.cn/handle/2XXMBERH/148381
专题兰州理工大学
通讯作者Zhong, Wenwu; Feng, Shangshen
作者单位1.Taizhou Univ, Sch Pharmaceut & Mat Engn, Taizhou 318000, Peoples R China;
2.Lanzhou Univ Technol, Sch Mat Sci & Engn, Lanzhou 730050, Peoples R China;
3.Zhejiang Agr & Forestry Univ, Sch Sci, Hangzhou 311300, Peoples R China
第一作者单位材料科学与工程学院
通讯作者单位理学院
推荐引用方式
GB/T 7714
Shen, Shijie,Zhang, Huanhuan,Xu, Aijiao,et al. Construction of NiSe2/BiVO4 Schottky junction derived from work function discrepancy for boosting photocatalytic activity[J]. Journal of Alloys and Compounds,2021,875.
APA Shen, Shijie.,Zhang, Huanhuan.,Xu, Aijiao.,Zhao, YuYi.,Lin, Zhiping.,...&Feng, Shangshen.(2021).Construction of NiSe2/BiVO4 Schottky junction derived from work function discrepancy for boosting photocatalytic activity.Journal of Alloys and Compounds,875.
MLA Shen, Shijie,et al."Construction of NiSe2/BiVO4 Schottky junction derived from work function discrepancy for boosting photocatalytic activity".Journal of Alloys and Compounds 875(2021).
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