Lanzhou University of Technology Institutional Repository (LUT_IR)
Construction of NiSe2/BiVO4 Schottky junction derived from work function discrepancy for boosting photocatalytic activity | |
Shen, Shijie1,2; Zhang, Huanhuan1; Xu, Aijiao1; Zhao, YuYi1; Lin, Zhiping1; Wang, Zongpeng1; Zhong, Wenwu1; Feng, Shangshen3 | |
2021-09-15 | |
发表期刊 | Journal of Alloys and Compounds |
ISSN | 0925-8388 |
卷号 | 875 |
摘要 | The rapid recombination of photogenerated carriers limits the photocatalytic activity of BiVO4. Here, we grew NiSe2 nanosheets on the surface of BiVO4 through a facile solvothermal method to construct a Schottky junction. Due to the discrepancy of work function, electrons at the interface are transferred from BiVO4 to NiSe2, thereby forming a built-in electric field. In virtue of the built-in electric field and the good conductivity of NiSe2, the photo-generated carriers can be quickly separated and transferred. In addition, the interaction at the interface reduces the band gap of BiVO4, which increases the absorption of visible light. These above benefits improve the photocatalytic performance. The photocatalytic reaction under visible light shows that the degradation rate of RhB for 9 mol% NiSe2 composited BiVO4 increases by 11 times compared with pure BiVO4. The simplicity of the preparation method and the significantly improved performance show the enormous potential of NiSe2 to be coupled with other semiconductor photocatalysts to improve their catalytic activity. © 2021 Elsevier B.V. |
关键词 | Catalyst activity Degradation Electric fields Energy gap Light Nickel compounds Phosphorus compounds Photocatalytic activity Rhodium compounds Selenium compounds Semiconductor junctions Vanadium compounds Work function Built-in electric fields Co catalysts Photocatalytic activities Photocatalytic performance Photocatalytic reactions Photogenerated carriers Reaction under Schottky junctions Solvothermal method Visible light |
DOI | 10.1016/j.jallcom.2021.160071 |
收录类别 | EI ; SCIE |
语种 | 英语 |
WOS研究方向 | Chemistry ; Materials Science ; Metallurgy & Metallurgical Engineering |
WOS类目 | Chemistry, Physical ; Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering |
WOS记录号 | WOS:000657525100005 |
出版者 | Elsevier Ltd |
EI入藏号 | 20211810295022 |
EI主题词 | Bismuth compounds |
EI分类号 | 701.1 Electricity: Basic Concepts and Phenomena ; 714.2 Semiconductor Devices and Integrated Circuits ; 741.1 Light/Optics ; 801.4 Physical Chemistry ; 802.2 Chemical Reactions ; 803 Chemical Agents and Basic Industrial Chemicals ; 804 Chemical Products Generally ; 931.3 Atomic and Molecular Physics ; 931.4 Quantum Theory ; Quantum Mechanics |
来源库 | WOS |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | https://ir.lut.edu.cn/handle/2XXMBERH/148381 |
专题 | 兰州理工大学 |
通讯作者 | Zhong, Wenwu; Feng, Shangshen |
作者单位 | 1.Taizhou Univ, Sch Pharmaceut & Mat Engn, Taizhou 318000, Peoples R China; 2.Lanzhou Univ Technol, Sch Mat Sci & Engn, Lanzhou 730050, Peoples R China; 3.Zhejiang Agr & Forestry Univ, Sch Sci, Hangzhou 311300, Peoples R China |
第一作者单位 | 材料科学与工程学院 |
通讯作者单位 | 理学院 |
推荐引用方式 GB/T 7714 | Shen, Shijie,Zhang, Huanhuan,Xu, Aijiao,et al. Construction of NiSe2/BiVO4 Schottky junction derived from work function discrepancy for boosting photocatalytic activity[J]. Journal of Alloys and Compounds,2021,875. |
APA | Shen, Shijie.,Zhang, Huanhuan.,Xu, Aijiao.,Zhao, YuYi.,Lin, Zhiping.,...&Feng, Shangshen.(2021).Construction of NiSe2/BiVO4 Schottky junction derived from work function discrepancy for boosting photocatalytic activity.Journal of Alloys and Compounds,875. |
MLA | Shen, Shijie,et al."Construction of NiSe2/BiVO4 Schottky junction derived from work function discrepancy for boosting photocatalytic activity".Journal of Alloys and Compounds 875(2021). |
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